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Technical Papers

• Wafer Dicing Using Dry Etching on Standard Tapes and Frames
• Plasma Dicing Methods For Thin Wafers
• Characterization of GaAs/AlGaAs non-selective ICP etch process for VCSELs applications
• The Effects of Increasing the Aspect Ratio of GaAs Backside Vias
• Eliminating Pillars During GaAs Via Etch Formation
• Characterization of a 10 μm/min chlorine-based ICP etch process for GaAs vias
• Advances in Deep Silicon Etching
• Advances in GaN Dry Etching Process Capabilities
• Process and Equipment Challenges for MEMS Deep Silicon Etching
• Photomask Cr Process: 65nm Plasma Etch has Arrived!
• Photomask SBU: 65nm Dry Etch has Arrived
• 905 nm wavelength laser as a new source for in-situ end point detection of dry etching of AlXGa1-XAs on GaAs
• Advanced Selective Dry Etching of GaAs/AlGaAs in High Density Inductively Coupled Plasmas
• Recent Development of Advanced InP Etching in an Inductively Coupled High Density Plasma
• Extremely High Selectivity Etching of GaAs/AlGaAs in Inductively Coupled Plasmas
• Selective RIE in BCl3/SF6 Plasmas for GaAs HEMT Gate Recess Etching
• Reduction of Device Damage During Dry Etching of Advanced MMIC Devices Using Optical Emission Spectroscopy
• Improving Etch Rates in Deep Silicon Etching
• Significant enhancement of selectivity and anisotropy for high rate plasma etching of GaAs over AlGaAsfor heterojunction bipolar transistor structure
• A New Production Solution for High Selective and Low-Damage Etching of GaAs-Based Devices
• Recent Improvements in Deep Silicon Etching
• Deep Silicon Etch Profile Control
• Reliable Deep Silicon Etching for High Volume Production
• Characterization of GaAs AlGaAs non-selective ICP etch
• Quartz etch process to improve etch depth linearity and uniformity using Mask Etcher IV
• Aspect ratio dependent etching lag reduction in deep silicon etch processes
• Endpoint Detection Methods for Time Division Multiplex Etch Processes
• Chip 2008: Process Latitude-Cornell
• Notch Reduction in Silicon on Insulator (SOI) Structures Using a Time Division Multiplex Etch Process
• The Advantages of Integrated Passives
• Plasma Processing for MMIC Device Manufacture
• Challenges and breakthroughs in plasma processing for advanced electronic devices
• Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively Coupled Plasma Chemical Vapor Deposition
• INDUCTIVELY-COUPLED PLASMA DEPOSITION OF LOW TEMPERATURE SILICON DIOXIDE AND SILICON NITRIDE FILMS FOR III-V APPLICATIONS
• Advanced Thin Film Processing for MMIC Manufacture
• Production Performance Success with a High Throughput PECVD System
• Stress Control of Si-based PECVD Dielectrics
• An Integrated Deep Silicon Etch-Directional Physical Vapor Deposition
• Batch Deposition Module Cuts Downtime and Material Waste
• Optimization of Low Stress PECVD Silicon Nitride
• Advanced Processing Capabilities for MEMS Device Fabrication
• Current Trends with DRIE-DSE Processing for MEMS Devices and Structures
• Silicon Nitride for MEMS Applications: LPCVD and PECVD Process Comparison